Location
Rochester Institute of Technology
Start Date
5-2015 12:00 AM
End Date
5-2015 12:00 AM
Description
Goal: To enable ferroelectric device research at RIT and to that end:
1.Developing an RIT process for fabrication of ferroelectric HfO2 devices 2.Enabling characterization of said films through set-up of a new ferroelectric test system
COinS
May 1st, 12:00 AM
May 1st, 12:00 AM
Ferroelectric HfO2 Thin Films
Rochester Institute of Technology
Goal: To enable ferroelectric device research at RIT and to that end:
1.Developing an RIT process for fabrication of ferroelectric HfO2 devices 2.Enabling characterization of said films through set-up of a new ferroelectric test system