Location
Rochester Institute of Technology
Start Date
5-2015 12:00 AM
End Date
5-2015 12:00 AM
Description
Goal: To demonstrate charge-trapping in a TANOS Stack at RIT
- Gate stack film depositions determined by experimentation, testing
- C-V structures fabricated and tested by patterning gate stack with GCA C-V Mask.
- NMOS charge-trap flash devices currently being fabricated with modified version of AdvCMOS150 Process w/ TANO gate stack.
COinS
May 1st, 12:00 AM
May 1st, 12:00 AM
TANOS (TaN, Al2O3, Si3N4, SiO2, Si) Charge-trap Flash Devices
Rochester Institute of Technology
Goal: To demonstrate charge-trapping in a TANOS Stack at RIT
- Gate stack film depositions determined by experimentation, testing
- C-V structures fabricated and tested by patterning gate stack with GCA C-V Mask.
- NMOS charge-trap flash devices currently being fabricated with modified version of AdvCMOS150 Process w/ TANO gate stack.