Location
Rochester Institute of Technology
Start Date
5-2015 12:00 AM
End Date
5-2015 12:00 AM
Description
Current Challenges to manufacturing •Limits of 193i and multiple patterning are approaching •10nm resolution has been demonstrated with multiple patterning •EUV as an alternative is expensive with low throughput
Advantages of Directed Self Assembly •Resolution of 20nm and possibly lower •Can be integrated with current patterning techniques •Inexpensive
Disadvantages of DSA •Complex patterns can be difficult or impossible to form •Has to be integrated into an existing lithography process •Pattern formation may take large amounts of time
Directed Self Assembly
Rochester Institute of Technology
Current Challenges to manufacturing •Limits of 193i and multiple patterning are approaching •10nm resolution has been demonstrated with multiple patterning •EUV as an alternative is expensive with low throughput
Advantages of Directed Self Assembly •Resolution of 20nm and possibly lower •Can be integrated with current patterning techniques •Inexpensive
Disadvantages of DSA •Complex patterns can be difficult or impossible to form •Has to be integrated into an existing lithography process •Pattern formation may take large amounts of time