Location
Rochester Institute of Technology
Start Date
5-2015 12:00 AM
End Date
5-2015 12:00 AM
Description
This work endeavored to optimize and integrate a process for depositing and patterning the gate film stack of TaN, Al 2O3, Si3N4, SiO2 , Si (TANOS) charge-trapping flash (CTF) memory with an existing complementary metal-oxidesemiconductor process flow. Fabricated capacitance-voltage devices with T-A-N-O thicknesses of 2500A° , 110A° , 75A° , and 30A° respectively show characteristic charge-trapping in subsequent program/erase (P/E) cycles (likely modified Fowler-Nordheim tunneling) with a maximum possible program threshold voltage of 2.7V for 5sec 28V program and minimum erased threshold voltage of -2.5V for 5sec 15V erase, w/ total P/E threshold voltage swing 5.2V. Device wafers are currently at step 22 of 67 and will be continued in the future, eventually demonstrating hot carrier injection P/E schemes
Index Terms —Charge-Trap, EEPROM, Energy Band Engineering, Flash, Fowler-Nordheim Tunneling, Gate Stack, HEI, MANOS, Nitride, TANOS, Tantalum
TANOS Charge-Trapping Flash Memory Structures
Rochester Institute of Technology
This work endeavored to optimize and integrate a process for depositing and patterning the gate film stack of TaN, Al 2O3, Si3N4, SiO2 , Si (TANOS) charge-trapping flash (CTF) memory with an existing complementary metal-oxidesemiconductor process flow. Fabricated capacitance-voltage devices with T-A-N-O thicknesses of 2500A° , 110A° , 75A° , and 30A° respectively show characteristic charge-trapping in subsequent program/erase (P/E) cycles (likely modified Fowler-Nordheim tunneling) with a maximum possible program threshold voltage of 2.7V for 5sec 28V program and minimum erased threshold voltage of -2.5V for 5sec 15V erase, w/ total P/E threshold voltage swing 5.2V. Device wafers are currently at step 22 of 67 and will be continued in the future, eventually demonstrating hot carrier injection P/E schemes
Index Terms —Charge-Trap, EEPROM, Energy Band Engineering, Flash, Fowler-Nordheim Tunneling, Gate Stack, HEI, MANOS, Nitride, TANOS, Tantalum