Location
Rochester Institute of Technology
Start Date
5-2015 12:00 AM
End Date
5-2015 12:00 AM
Description
A process is created at the Rochester Institute of Technology Semiconductor & Microsystems Fabrication Laboratory (SMFL) to create crossbar structures. These structures can be created out of a variety of materials via different patterning methods, and can be used to investigate potential memristive behavior of many different materials. Using the crossbar structure, resistive switching of an Al/TiO /Al structure is observed.
Index Terms —Crossbar, memristor, transition metal oxides
Resistive Transition Metal Oxide Memory
Rochester Institute of Technology
A process is created at the Rochester Institute of Technology Semiconductor & Microsystems Fabrication Laboratory (SMFL) to create crossbar structures. These structures can be created out of a variety of materials via different patterning methods, and can be used to investigate potential memristive behavior of many different materials. Using the crossbar structure, resistive switching of an Al/TiO /Al structure is observed.
Index Terms —Crossbar, memristor, transition metal oxides