Abstract
Nanosphere lithography, a technique of generating hexagonally packed monolayers with nanospheres, has been studied and been shown to increase the efficiency of the devices such as light emitting diodes and solar cells. In this research, the fabrication of nanosphere lithography was explored with the aim of identifying robust deposition methods. Two resultant methods yielded large (1 cm by 1 cm) monolayers of nanospheres, with further mask modification via sphere diameter reduction using reactive ion etch. Photoluminescence (PL) measurements confirmed the existence of the monolayer and the enhancement due to the addition of nanospheres. A thin layer of aluminum was deposited onto samples after performing nanosphere lithography, with the nanospheres subsequently lifted off to create various aluminum structures. Finite-difference time-domain simulations were conducted to compare with PL data. Additional experiments and processes, such as the ones that create localized surface plasmon, nano-dots, etc., are outlined for future work.
Library of Congress Subject Headings
Nanostructured materials; Nanolithography; Semiconductors--Materials; Monomolecular films; Photoluminescence--Measurement
Publication Date
7-2016
Document Type
Thesis
Student Type
Graduate
Degree Name
Electrical Engineering (MS)
Department, Program, or Center
Electrical Engineering (KGCOE)
Advisor
Jing Zhang
Advisor/Committee Member
Sean Rommel
Advisor/Committee Member
James Moon
Recommended Citation
Lei, Xing, "Development of Nanosphere Lithography for Semiconductor Device Applications" (2016). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/9183
Campus
RIT – Main Campus
Comments
Physical copy available from RIT's Wallace Library at QD509.M65 L45 2016