Incorporation of nitrogen into the silicon lattice has been shown to severely retard the oxidation rate. The objective of this experiment was to determine a) whether it was a damage related issue and b) the kinetics. Equal doses of silicon were implanted along with the diatomic nitrogen (AMU 28) to determine whether it was a damage related issue. The added silicon did not hinder or benefit oxide growth. From this experiment, the oxidation rate of nitrogen implanted silicon can be best fit by the use of a linear model. Surface charge analysis indicated that flatband charge, interface trap density, and lifetime increased after nitrogen implant.
Wescott, Nathaniel E.
"Oxidation Kinetics of Nitrogen Implanted Silicon,"
Journal of the Microelectronic Engineering Conference: Vol. 9:
1, Article 5.
Available at: https://repository.rit.edu/ritamec/vol9/iss1/5