This project involved the simulation and analysis of critical dimensions (CD) using the RIT Canon 2000i1 i-line stepper. This was accomplished by optimizing the stepper parameters for specific resist feature widths. There are many tools and methods that lithography engineers have at their disposal for use in optimizing current and future lithography processes. The focus-exposure (1?~E) matrix and resulting plot are integral parts of standard IC processing~ It is one of the most important plots used in lithography since it demonstrates how exposure and focus work together to affect critical dimension, sidewall angle, and resist thickness loss data. This data is then analyzed to determine the process capability or useable limits for both focal depth and exposure latitude values for a given lithography process.
"Critical Dimension Analysis on the RIT Canon i-line Stepper,"
Journal of the Microelectronic Engineering Conference: Vol. 9:
1, Article 2.
Available at: https://repository.rit.edu/ritamec/vol9/iss1/2