The objective of this project was to create an optimized, repeatable process for integrated PSI (Porous Silicon) LEDs. Porous Silicon is a lightemitting version of silicon, formed by electrochemical etching in an HF-containing solution. This material becomes stable once passivated with oxygen at high temperatures (900°C) and maintains its light-emitting properties. This study systematicaUy investigated the process effects on electroluminescence (EL) and electrical transport characteristics. The relationship between fabrication conditions and the structural and electronic properties of porous silicon have been subsequently examined. It was discovered that pre anodization substrate preparation had a dominant influence on the device characteristics. Analysis of the designed experiments (ANOVA) has been used to quantify the influence of factors under study; details of which will be presented.
Wheaton, Tina M.
"Oxide Passivated Nanocrystalline Silicon LED Optimization,"
Journal of the Microelectronic Engineering Conference: Vol. 9:
1, Article 14.
Available at: https://repository.rit.edu/ritamec/vol9/iss1/14