Ivan Puchades

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As Rochester Institute of Technology (RH) brings into production i-line capabilities with a new Canon stepper, resolution beyond 2μm will be possible. The present project prepares one of RIT’s most novel and successful processes for this transition. The process for a Charge Injection Device Imager (CD)) has been entirely developed at RIT through the work and collaboration between the Imaging Science and Microelectronic Engineering Departments. After the initial success in the design and fabrication of 8X8 and 32X32 imager, a more challenging 54X40 process was developed employing 6-micron PMOS technology. The goal of this project is the successful fabrication of an imager that will allow for the capture of real images. All this exclusively fabricated at RIT. This project -recalls on the latter design and which transitions the Cl]) process in preparation for 2-micron technology. The device transistors has been tested and characterized and the results are compared to simulated transistor data obtained using SITPREM-IV.

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