Publication Date
1998
Document Type
Paper
Abstract
The primary focus of this project was to continue process development of integrated PSibased (porous silicon) LEDs. Porous silicon is a light-emitting material formed by electrochemical etching of the silicon substrate, resulting in the formation of pores and wire-like silicon structures [1]. This study investigates new strategies in the effort to advance the implementation of PSi-based LEDs with standard CMOS technology by providing devices that are substrate-based, electrically isolated, array-addressable and voltage modulated. Existing problems with porous silicon LEDs include high bias operation, low external quantum efficiency (EQE), and poor stability. This work has resulted in the fabrication of LEDs with significantly improved performance, however further device optimization is required.
Recommended Citation
Benz, Jason
(1998)
"Process Development for Porous Silicon Light-Emitting Devices,"
Journal of the Microelectronic Engineering Conference: Vol. 8:
Iss.
1, Article 6.
Available at:
https://repository.rit.edu/ritamec/vol8/iss1/6