Publication Date
1998
Document Type
Paper
Abstract
The first Thin Film Transistor (TFT) CMOS process for RIT’s Semiconductor Processing Center utilizing SIMOX wafers was developed. A standard 9 mask-set P-well CMOS process flow originally designed for bulk silicon was modified to accommodate the new starting material.
Recommended Citation
Phillips, Andrew
(1998)
"SIMOX CMOS Process Design and Fabrication,"
Journal of the Microelectronic Engineering Conference: Vol. 8:
Iss.
1, Article 3.
Available at:
https://repository.rit.edu/ritamec/vol8/iss1/3