Publication Date
1998
Document Type
Paper
Abstract
The work function of p-type and n-type metal electrode materials deposited by RF magnetron sputtering in argon was determined by CV measurements on MOS capacitors. In addition, the work function of p-type and n-type nitride electrode materials deposited by rf magnetron sputtering in nitrogen was also determined by CV measurements on MOS capacitors. The metals deposited were molybdenum, tantalum, titanium, and aluminum. The nitrides deposited contained the metals listed previously with the exception of aluminum. The work functions were determined to be 4.70 +1- 0.49 eV for Al, 4.46 +1- 0.26 eV for Mo, and 4.22 eV for Ta. Capacitors of the other films are still in the progress for fabrication or require further testing. The work function results of these materials will be published later.
Recommended Citation
Kaltaler, Benjamin M.
(1998)
"Work Function of Refractory Metals and Nitrides from CV Analysis,"
Journal of the Microelectronic Engineering Conference: Vol. 8:
Iss.
1, Article 10.
Available at:
https://repository.rit.edu/ritamec/vol8/iss1/10