The objective of this project is to investigate the electrical characteristics of Buried Channel PMOS for twin-well CMOS process. Project involves the investigation of the P-MOSFET by varying the standard boron (B11) threshold adjust implant dose. In addition, the effect of adding a phosphorus (P31) counter doping implant on the device characteristics is also investigated. The addition of counter doping implant will reduce the thickness of the buried channel created by the threshold adjust implant. Test results for the counter doped twin-well process shows stronger transistor turn-off and lower off-state leakage current without significantly affecting the on-state current drive.
"Investigation of Buried Channel PMOS,"
Journal of the Microelectronic Engineering Conference: Vol. 7:
1, Article 9.
Available at: https://repository.rit.edu/ritamec/vol7/iss1/9