The objective for this study is to develop a device fabrication process that is compatible with the fabrication process that is compatible with the fabrication of on-chip micromachine sensors. It is desirable for the devices to be easily fabricated and to incorporate the least number of additional fabrication steps in the existing procedure of the micromechanical pressure sensor.
The polysilicon gate PMOS technology was merged into the fabrication of the capacitive pressure sensor with only two additional lithography steps that utilized the same mask. The primary results showed working PMOS transistors with a threshold voltage of -1 V, inverters with gains around 3, and a three stage oscillator with an operating frequency of 6 MHz.
Schenck, Earl P.
"Development of a Polygate PMOS Process Compatible with Micromechanical Sensor Fabrication,"
Journal of the Microelectronic Engineering Conference: Vol. 6:
1, Article 5.
Available at: https://repository.rit.edu/ritamec/vol6/iss1/5