William Roberts

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ACCUGLASS 104 was characterized for four micron via etching. The quality of the Spin On Glass (SOG) layer was improved by increasing the cure temperature to 600 degrees c for one hour. A buffered hydrofloric acid diluted 100:1 produced an etch rate of 2700 Angstroms per minute. A plasma etching process was design with a gas mixture of CHF3/CF4/02 in a ratio of 10:3:1.5 wit a regal 700 plasma etcher. The SOG etch rate of this mixture was 600 Angstroms per minute. The selectivity of this plasma for SOG to poly silicon was 12:1. The wet process produced better image profiles for thick glass layers, while the plasma process etch rate is better suited for thin layers.

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