Resolution capability of a GCA Mann 4800 DSW Stepper was improved using a bilayer photoresist scheme consisting of CEM-420 applied on Shipley 1400-27 resist. Wall profile or contrast Improvements were observed experimentally on a 1.4 micron line-space pattern by using the Scanning Electron Microscope. Perkin-Elmer Development Rate Moniter (DRM) simulations predicted the above improvements by the use of the PROSIM software applications program. The physical data and simulations were evaluated and demonstrated a contrast Improvement on the order of four times for the wafer with the contrast enhancement material.
Sutton, Daniel R.
"The Use of a Contrast Enhancement Layer to Extend the Practical Resolution Limits of Optical Lithographic Systems,"
Journal of the Microelectronic Engineering Conference: Vol. 2:
1, Article 31.
Available at: https://repository.rit.edu/ritamec/vol2/iss1/31