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Resolution capability of a GCA Mann 4800 DSW Stepper was improved using a bilayer photoresist scheme consisting of CEM-420 applied on Shipley 1400-27 resist. Wall profile or contrast Improvements were observed experimentally on a 1.4 micron line-space pattern by using the Scanning Electron Microscope. Perkin-Elmer Development Rate Moniter (DRM) simulations predicted the above improvements by the use of the PROSIM software applications program. The physical data and simulations were evaluated and demonstrated a contrast Improvement on the order of four times for the wafer with the contrast enhancement material.

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