Publication Date
2009
Document Type
Paper
Abstract
The design of a simulator for EUV lithography mirrors is presented. A method of computing the expected value of reflectance and transmittance in stratified absorbing media with rough interfaces, based on Jay Eastman’s matrix formalism for scattered fields, was developed. In addition, a proof of principle experiment confirmed process feasibility for EUV mirror research at RIT.
Recommended Citation
Jota, Thiago S.
(2009)
"A Simulator for EUV Lithography Mirrors,"
Journal of the Microelectronic Engineering Conference: Vol. 18:
Iss.
1, Article 7.
Available at:
https://repository.rit.edu/ritamec/vol18/iss1/7