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The low-temperature annealing kinetics of ion implanted silicon is a critical factor worthy of consideration when thin film crystalline silicon is processed on a low temperature substrate. Deep Level Transient Spectroscopy, Thermally Stimulated Current and Current-Voltage characteristics suggest that competition between Solid Phase Epitaxial Regrowth and dislocation loop formation is a critical factor in silicon implanted with P31 ions and annealed at temperatures ranging from 525°C to 65O°C. Solid Phase Epitaxy dominates the kinetics of fully amorphized samples annealed at 525°C, where shallow-level trap states dominate the reversed-bias leakage current of diodes. At low implanted doses (where the substrate is not completely amorphized) and at 65O°C, dislocation loop nucleation and growth seems to dominate annealing kinetics, resulting in the formation of a deep-level trap at .528 eV.

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