Nickel Nanodots for Memory Devices

Authors

Anthony J. Pacifico

Publication Date

2009

Document Type

Paper

Abstract

The formation of Nickel Nanodots (Ni-ND) were studied for the purpose of their potential use in memory devices. Ni-NDs were formed on SiO₂ and integrated into capacitors. These structures were then tested to demonstrate charge storage characteristics.

Recommended Citation

Pacifico, Anthony J. (2009) "Nickel Nanodots for Memory Devices," Journal of the Microelectronic Engineering Conference: Vol. 18: Iss. 1, Article 12.
Available at: https://repository.rit.edu/ritamec/vol18/iss1/12