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A linear-source, atmospheric-pressure RF glow discharge plasma has been designed, fabricated, and analyzed. The RIT atmospheric-pressure plasma (RITAPP) consists of two parallel-plate electrodes separated by a 1.2 mm gap. Helium is flown through the gap, exiting the slit and impinging a substrate. 13.56 MHz RF power is applied to one electrode, resulting in a non-thermal plasma with a gas temperature (Tg) between 50 and 150 °C. Optical emission spectroscopy was used to determine spectral radiation in the UV-Vis region of helium and helium/oxygen plasmas. Singlet and triplet helium emissions as well as numerous 0, H, and OH peaks are observed. Surface treatment of bare 2” (100) p-type silicon wafers was performed by short exposure to a He/O2 plasma exposure increased surface energy, creating a hydrophilic surface. 20-minute exposures of bare and RCA-cleaned silicon substrates to a He/O2 plasma were analyzed using ellipsometry and mercury probe C-V measurements. Optical thickness was determined to be 3.4 nm while C-V measurements revealed that both the plasma-grown oxide and the chemical oxides exhibited enhanced dielectric properties following treatment. Work is ongoing to expand upon oxidation experiments as well as I-V diagnostics of the plasma. In addition, investigation of low-temperature carbon nanotube growth is underway.

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