Publication Date
2008
Document Type
Paper
Abstract
A methodology for the modeling and theoretical analysis of novel nanostructured photovoltaic devices is presented in this work. The nanostructures in consideration are quantum wells and quantum dots composed of 111-V materials. Their incorporation into the space charge region of an otherwise conventional solar cell is presented as a means to increase photovoltaic energy conversion efficiency. The enhancement for both single- and multi-junction solar cells is also outlined. Limitations of the available models are briefly discussed. Analyzed results allow for the further optimization of these novel devices.
Recommended Citation
Aguinaldo, Ryan
(2008)
"Theoretical Study and Device Modeling of III-V Nanostructured Photovoltaics,"
Journal of the Microelectronic Engineering Conference: Vol. 17:
Iss.
1, Article 2.
Available at:
https://repository.rit.edu/ritamec/vol17/iss1/2