As film thicknesses get smaller and smaller it is important to maintain high quality dielectric films. A J-ramp test is a method for extracting the characteristics of dielectric films breakdown. Two important parameters that can be extracted using a i-ramp test are the maximum electric field and the charge to breakdown (QBD) of the dielectric. The charge to breakdown the dielectric is a very important parameter because it will be significantly affected by moderate changes within a dielectric. Historically, this parameter would be obtained through stress tests, using a single current level measurement that may take hours or even days. A J-ramp measures the same parameter in only a fraction of the time. The J-ramp test was successfully implemented into the RIT device characterization laboratory. The test worked well for characterizing changes in the film after certain processes. The absolute values for the charge to breakdown appeared to be lower than literature values.
"Implementation of a J-ramp Test Process to Examine the Reliability of Dielectric Films,"
Journal of the Microelectronic Engineering Conference: Vol. 15:
1, Article 15.
Available at: https://repository.rit.edu/ritamec/vol15/iss1/15