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The goal of this experimentation consists of the formation of TiSi2 and demonstration of its electrical properties. The successful formation of a TiSiproduct was be confirmed by scanning electron micrograph (SEM) images, Rutherford Backscatter Spectroscopy (RBS) data, and electrical characterization. Following an annealing heat treatment, the RBS data indicated the presence of a Si substrate, a film that compositionally appears to be TiSi2, and a surface layer of TiO2. The electrical testing indicates the presence of ohmic behavior, and the resistance is strongly dependant on the furnace annealing and rapid thermal processing (RTP) treatments.

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