Characterization of TiSi2 Process and Electrical Properties

Authors

Laurel E. Haydock

Publication Date

2005

Document Type

Paper

Abstract

The goal of this experimentation consists of the formation of TiSi₂ and demonstration of its electrical properties. The successful formation of a TiSiproduct was be confirmed by scanning electron micrograph (SEM) images, Rutherford Backscatter Spectroscopy (RBS) data, and electrical characterization. Following an annealing heat treatment, the RBS data indicated the presence of a Si substrate, a film that compositionally appears to be TiSi₂, and a surface layer of TiO₂. The electrical testing indicates the presence of ohmic behavior, and the resistance is strongly dependant on the furnace annealing and rapid thermal processing (RTP) treatments.

Recommended Citation

Haydock, Laurel E. (2005) "Characterization of TiSi2 Process and Electrical Properties," Journal of the Microelectronic Engineering Conference: Vol. 15: Iss. 1, Article 13.
Available at: https://repository.rit.edu/ritamec/vol15/iss1/13