Integration of High-K Dielectrics and Metal Gates into Submicron NMOS Transistors at RIT

Authors

Daniel J. Jaeger

Publication Date

2005

Document Type

Paper

Abstract

Zirconium oxide, a high-k gate dielectric, and molybdenum, a refractory metal, were successfully integrated into an existing submicron NMOS transistor process at RIT. Submicron high-k gate dielectric metal gate transistors were produced as a result of this project, and electrical characteristics were compared to reference submicron transistors fabricated with 75 A silicon dioxide gate dielectrics and polysilicon gates.

Recommended Citation

Jaeger, Daniel J. (2005) "Integration of High-K Dielectrics and Metal Gates into Submicron NMOS Transistors at RIT," Journal of the Microelectronic Engineering Conference: Vol. 15: Iss. 1, Article 1.
Available at: https://repository.rit.edu/ritamec/vol15/iss1/1