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The effect of surface treatment on electrical characteristics of aluminum-silicon contacts has been observed. It has been shown that the electrical characteristics of the contacts are affected by the quality of the interfacial oxide and sintering conditions. Four different surface treatments were performed on the silicon prior to metal deposition to vary the thickness and quality of the interfacial oxide. Four different sintering conditions were performed on the wafers to determine the effect of temperature and ramp-down rates. Three methods of calculating barrier height were used: current-voltage, current-temperature, and capacitance-voltage. Some results correlated well with previous reported work, however other results demonstrated inconsistencies that require further investigation.

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