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A Microelectromechanical (MEMS) pressure sensor was designed, fabricated, and tested. Photomasks were designed for the project and built in house at RIT. The masks included designs for three separate device designs: devices to be fabricated with a KOH bulk etch, devices to be fabricated with an Surface Technology Systems (STS) Deep Reactive Ion Etch (DRIE), and a third set of scaled device designs for use with the STS DRIE process. Devices were tested in house, and the ideal design was determined. The most sensitive device, which had a resistor L/W of 10, demonstrated a voltage differential of 39 mV.

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