A preliminary effort in Electroluminescent (EL) device fabrication using erbium-doped silicon based materials at Rochester Institute of Technology’s Microelectronic Engineering Fabrication Facilities was attempted in this study. Field-assisted infiltration would be used to incorporate erbium ions into a porous silicon film. The film would be oxidized and anneal to form and erbium and oxygen rich active layer suitable for light emission. Different erbium anneals (900°C to 1100°C) would be executed and results would be thoroughly examined for any differences in the electrical or luminescent characteristics. No functional devices were fabricated, but proof of erbium activation and excitation was achieved through detection of photoluminescence (PL) in the 1100°C samples.
Miceli, Joseph J.
"Erbium-Doped Silicon Based LEDs,"
Journal of the Microelectronic Engineering Conference: Vol. 10:
1, Article 8.
Available at: https://repository.rit.edu/ritamec/vol10/iss1/8