The objective of this project is to develop a robust process to deposit Tantalum nitride barrier layer for copper metallization. TaN films were reactively sputtered in a twin cathode AC inverted cylindrical magnetron configuration using the lonTech Cyclone sputtering system. The dependence of thickness, resistivity and phase changes as a function of N2 flow rate was studied. A designed experimental approach was used to optimize resistivity and the phases formed. A 10 sccm N2 flow (with 99 sccm Ar) deposited at 4 mTorr and 2 kW pressure gave an amorphous bcc-phase Ta(N) with a low resistivity of about 220 μ Ωcm. Further analysis would be done to study the barrier properties, after depositing copper and doing electrical, structural and chemical characterization.
"Reactive sputtering of tantalum Nitrides for Diffusion Barrier Layers,"
Journal of the Microelectronic Engineering Conference: Vol. 10:
1, Article 11.
Available at: https://repository.rit.edu/ritamec/vol10/iss1/11