Publication Date
2000
Document Type
Paper
Abstract
The goal of this investigation was to develop a cobalt silicide formation process as a stepping stone to investigate a novel patterning technique known as, LOCOSI (LOCal Oxidation of Silicide). Cobalt suicide films were formed by sputter depositing cobalt onto silicon wafers then annealed at temperatures varying from 750 - 1000°C using two methods. The first method was a conventional anneal using a horizontal furnace using a forming gas ambient. The second method was a RTA (Rapid Thermal Anneal) using a nitrogen ambient. The RTA process for silicidation provided essentially a continuous film with minimal cracking, whereas the furnace anneals resulted in noncontinuous cobalt suicide films. The patterning of the films, which requires a patterned oxidation mask similar to the LOCOS (LOCal Oxidation of Silicon) process, was unsuccessful.
Recommended Citation
Patel, Neil S.
(2000)
"Cobalt Silicide Formation and Patterning Technology,"
Journal of the Microelectronic Engineering Conference: Vol. 10:
Iss.
1, Article 10.
Available at:
https://repository.rit.edu/ritamec/vol10/iss1/10