Design and Modeling of an Advance CMOS Process

Authors

John G. Hock

Publication Date

1987

Document Type

Paper

Abstract

An advanced ten level five micron CMOS process was designed. The process was modeled using SUPREM II software to calculate doping profiles, junction depths, and threshold voltages.

Recommended Citation

Hock, John G. (1987) "Design and Modeling of an Advance CMOS Process," Journal of the Microelectronic Engineering Conference: Vol. 1: Iss. 1, Article 12.
Available at: https://repository.rit.edu/ritamec/vol1/iss1/12