Description
A small field refractive projection system for operation at the 193.3 nm wavelength of a spectrally narrowed ArF excimer laser is being constructed. The 1 mm field, 20X system operates with a variable objective lens numerical aperture from 0.30 to 0.60, variable partial coherence, and control over illumination fill and mask tilt. A 30 W maximum power ArF excimer laser has been spectrally line-narrowed through incorporation of tilted Fabry-Perot etalons into the laser cavity, allowing linewidths on the order of7 cm' (26 pm) with one etalon and 0.5 cm1 (2pm) with two etalons. This work reports laser line narrowing and lens performance results. Simulations of aerial image intensity distributions from lens aberration data will be presented for 0.25 and 0.20 micron geometry.
Date of creation, presentation, or exhibit
8-8-1993
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Bruce W. Smith, Malcolm C. Gower, Mark Westcott, Lynn F. Fuller, "193-nm deep-UV lithography system using a line-narrowed ArF excimer laser", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150488; https://doi.org/10.1117/12.150488
Campus
RIT – Main Campus
Comments
Copyright 1993 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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