Description
A novel atomic force microscope (AFM) is used to image a microlithographic sample. The AFM operates in the non destructive non-contact mode, uses glass tips as opposed to tungsten or silicon, and has an optical interferometric detection system. Its estimated lateral resolution is under 10 nanometers and much better in the z direction. A sample consisting of chrome features on quartz was produced for measurements using AFM and electric probe techniques. The features are single and grouped lines on the order of 1 .tm incorporated into an electric probe pad layout. Dimensions of these features are determined from the AFM images by relating their sizes in pixels to the excursions of the scanners during the formation of the images. These results are compared with measurements obtained through electric probing techniques.
Date of creation, presentation, or exhibit
8-4-1993
Document Type
Conference Paper
Department, Program, or Center
Microelectronic Engineering (KGCOE)
Recommended Citation
Ricardo Toledo-Crow, Mehdi Vaez-Iravani, Bruce W. Smith, Joseph R. Summa, "Characterization of atomic force microscopy and electrical probing techniques for IC metrology", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148946; https://doi.org/10.1117/12.148946
Campus
RIT – Main Campus
Comments
Copyright 1993 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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