Ion Implantation of Porous Silicon

Authors

C. Peng, University of Rochester
Philippe M. Fauchet, University of Rochester
J. M. Rehm, University of Rochester
G. L. McLendon, University of Rochester
F. Seiferth, Rochester Institute of Technology
Santosh K. Kurinec, Rochester Institute of TechnologyFollow

Abstract

Investigates the ion implantation of porous silicon (Si). Properties of light-emitting Si; Application of continuous-wave and time dependent photoluminescence spectroscopies; Comparison of dopant implantation effect in varying doses.

Publication Date

3-7-1994

Comments

This is the post-print of an article published by the American Institute of Physics. Copyright 2005 American Institute of Physics. The final, published version is available here: https://doi.org/10.1063/1.110858

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works in February 2014.

Document Type

Article

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Recommended Citation

C. Peng, P.M. Fauchet, J.M. Rehm, G.L. Mclendon, F. Seiferth, and S.K. Kurinec, Applied Physics Letters 64, 1259 (1994). https://doi.org/10.1063/1.110858

Campus

RIT – Main Campus