Nanowire devices are emerging as the replacement technology to planar devices, such as Light Emitting Diodes (LEDs) and Field Effect Transistors (FETs), due to better performance and higher device densities. Here, top-down GaN nanowire fabrication is studied through the use of dry and wet etching techniques. Specifically, dry etching is studied focusing on the effects of etching power, pressure, and the use of chloroform during the process. Wet etching of GaN nanowires takes the initial structures formed by the dry etch to create the desired high aspect ratio, tunable-diameter nanowires. Effects of etching time, temperature, concentration, and ability to remove etch damage are thoroughly studied. Insights of these results are utilized to form high aspect ratio vertical wires with diameters smaller than 100 nm for high performance GaN devices.

Library of Congress Subject Headings

Nanowires--Mechanical properties; Gallium nitride

Publication Date


Document Type


Student Type


Degree Name

Materials Science and Engineering (MS)

Department, Program, or Center

School of Chemistry and Materials Science (COS)


Jing Zhang

Advisor/Committee Member

Robert Pearson

Advisor/Committee Member

Karl Hirschman


RIT – Main Campus

Plan Codes