Abstract
Nanowire devices are emerging as the replacement technology to planar devices, such as Light Emitting Diodes (LEDs) and Field Effect Transistors (FETs), due to better performance and higher device densities. Here, top-down GaN nanowire fabrication is studied through the use of dry and wet etching techniques. Specifically, dry etching is studied focusing on the effects of etching power, pressure, and the use of chloroform during the process. Wet etching of GaN nanowires takes the initial structures formed by the dry etch to create the desired high aspect ratio, tunable-diameter nanowires. Effects of etching time, temperature, concentration, and ability to remove etch damage are thoroughly studied. Insights of these results are utilized to form high aspect ratio vertical wires with diameters smaller than 100 nm for high performance GaN devices.
Library of Congress Subject Headings
Nanowires--Mechanical properties; Gallium nitride
Publication Date
7-2018
Document Type
Thesis
Student Type
Graduate
Degree Name
Materials Science and Engineering (MS)
Department, Program, or Center
School of Chemistry and Materials Science (COS)
Advisor
Jing Zhang
Advisor/Committee Member
Robert Pearson
Advisor/Committee Member
Karl Hirschman
Recommended Citation
Hartensveld, Matthew, "Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires" (2018). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/9835
Campus
RIT – Main Campus
Plan Codes
MSENG-MS
