The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sensor capable of detecting the earth’s magnetic field, with strength’s of ~50 μT. Preliminary testing of N-well Van Der Pauw structures using strong neodymium magnets showed proof of concept for hall voltage sensing, however, poor geometry of the structures led to a high offset voltage. A 1-axis Hall effect sensor was designed, fabricated and tested with a sensitivity of 1.12x10-3 mV/Gauss using the RIT metal gate PMOS process. Poor geometry and insufficient design produced an offset voltage of 0.1238 volts in the 1-axis design; prevented sensing of the earth’s magnetic field. The new design features improved geometry for sensing application, improved sensitivity and use the RIT sub-CMOS process. The completed 2-axis device showed an average sensitivity to large magnetic fields of 0.0258 μV/Gauss at 10 mA supply current.

Library of Congress Subject Headings

Hall effect devices; Magnetic fields--Measurement--Equipment and supplies; Metal oxide semiconductors, Complementary

Publication Date


Document Type


Student Type


Degree Name

Microelectronic Engineering (MS)

Department, Program, or Center

Microelectronic Engineering (KGCOE)


Lynn F. Fuller

Advisor/Committee Member

Ivan Puchades

Advisor/Committee Member

Santosh Kurinec


Physical copy available from RIT's Wallace Library at TK7872.H3 L63 2015


RIT – Main Campus

Plan Codes