Abstract

The present work is an investigation and characterization of a new technique for etching and masking Lithium niobate (LiNb03) to realize high aspect ratio trenches. LiNb03 is a single crystal optically clear (from 350 nm to 5 micometer wavelength), piezoelectric material. It is also inert to most reactants and has a high curie temperature (the temperature that a material loses its piezoelectric effect). These properties allow LiNb03 to be used as a sensor or actuator in harsh environments. To realize this actuator/sensor a multilevel lithium niobate deep etching technique is currently unavailable. The present work uses a chrome gold mask and a solution of hydrofluoric acid and nitric acid at 90 C to etch the LiNb03. The new wet etch method developed yields a an etch rate of 50 /micrometer per hour on the -z face and a 250 nm per hour on the +z face.

Library of Congress Subject Headings

Lithium niobate; Semiconductors--Etching; Plasma etching

Publication Date

2002

Document Type

Thesis

Department, Program, or Center

Mechanical Engineering (KGCOE)

Advisor

Pokines, Brett

Advisor/Committee Member

Fuller, Lynn

Advisor/Committee Member

DeBartolo, Elizabeth

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TP156.P5 R363 2002

Campus

RIT – Main Campus

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