Abstract

The goal of this work is to develop the processes needed for the demonstration of a fully-depleted (FD) thin-body fin field effect transistor (FinFET). Recognized by the 2003 International Technology Roadmap for Semiconductors as an emerging non-classical CMOS technology, FinFETs exhibit high drive current, reduced short-channel effects, an extreme scalability to deep submicron regimes. The approach used in this study will build on previous FinFET research, along with new concepts and technologies. The critical aspects of this research are: (1) thin body creation using spacer etchmasks and oxidation/etchback schemes, (2) use of an oxynitride gate dielectric, (3) silicon crystal orientation effect evaluation, and (4) creation of fully-depleted FinFET devices of submicron gate length on Silicon-on-Insulator (SOI) substrates. The developed process yielded functional FinFETs of both thin body and wide body variety. Electrical tests were employed to describe device behaviour, including their subthreshold characteristics, standard operation, effects of gate misalignment on device performance, and impact of crystal orientation on device drive current. The process is shown to have potential for deep submicron regimes of fin width and gate length, and provides a good foundation for further research of FinFETs and similar technologies at RIT.

Library of Congress Subject Headings

Metal oxide semiconductors, Complementary; Thin-film circuits; Transistors; Microelectronics--Research

Publication Date

2003

Document Type

Thesis

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Advisor

Rommel, Sean

Advisor/Committee Member

Fuller, Lynn

Advisor/Committee Member

Hirschman, Karl

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.99.M44 C87 2004

Campus

RIT – Main Campus

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