Abstract

An Integrated Phosphor Field Emission Device (IPFED) has been fabricated at the Rochester Institute of Technology for the purpose of developing a new, flat panel display technology. The device incorporates a new, cathodoluminescent, thin film phosphor (Ta2Zn308) developed at RIT as an anode. A cathode and control gate, both consisting of a thin layer of molybdenum are also included in the device. Electrons are tunneled from the cathode via Fowler-Nordheim tunneling to energetically strike the phosphor anode. The anode then produces light, via cathodoluminescence, which the human eye can detect. Standard semiconductor processes were utilized in the fabrication of the device. These processes include; sputtering of Zinc Oxide, tantalum, molybdenum, and quartz, deposition of chemically vapor deposited (CVD) oxide, reactive ion etching of tantalum, molybdenum, and silicon dioxide using CHF3/He, CF4/H2, or SF6 plasmas, using a G-line stepper and diazonaphthoquinone (DNQ) novolac resin resists to pattern the aforementioned materials, and utilizing a Rapid Thermal Processor (RTP). The device can be scaled from ultra high resolution (10 jim pitch or less) to standard SVGA resolution (0.28mm pitch). Bright (no way to quantify) pixels have been observed at 200nA of current at 100V of acceleration energy. The control gate which was built into the structure does not function as designed due to shorting problems between the control gate and cathode. A process for the vacuum encapsulation of the devices has also been developed. This process does not require any special alignment of a separate faceplate. Many of the known problems with other field emissive displays have been circumvented by this new design.

Library of Congress Subject Headings

Information display systems--Design and construction; Phosphors; Thin film devices; Cathodoluminescence

Publication Date

1997

Document Type

Thesis

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Advisor

Potter, Michael

Advisor/Committee Member

Kuninee, Santish

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7882.I6 L36 1997

Campus

RIT – Main Campus

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