Abstract

"With the increasing demand for smaller devices that can perform faster and more reliably there is a need to explore options that allow for this combination in spite of the fact that smaller size tends to lead to a reduction in reliability and overall device performance. High electron mobility transistors (HEMTs) have proven superior to MOSFETS and BJTs in the areas of voltage and temperature ranges in which they can operate as well as their high breakdown fields, carrier density and velocity saturation. Studying HEMTs and understanding their constraints and how they respond to variations in their makeup and in the environment in which they will be used can help to make the best possible choices in fabricating these devices as well as pushing the envelope to make them better. In an attempt to study III-V heterojunctions in general, and AlGaN/GaN heterojunctions in particular, a numerical solution to the coupled Poisson-Schrödinger equations will be presented.

Library of Congress Subject Headings

Modulation-doped field-effect transistors--Mathematical models; Gallium nitride; Heterostructures

Publication Date

2006

Document Type

Thesis

Department, Program, or Center

Microelectronic Engineering (KGCOE)

Advisor

Islam, Syed

Advisor/Committee Member

Moon, James

Advisor/Committee Member

Ramanan, Sannasi

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.95 .M36 2006

Campus

RIT – Main Campus

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