Abstract

Ion implanted antimony (121Sb) is characterized as an n-type dopant in single crystal (100) oriented silicon. The required implantation equipment and critical parameters are discussed. The experimental procedures used in this study are presented along with the resulting data on dopant distribution and crystal damage annealing. The tradeoffs between antimony and arsenic, the more commonly used heavy n-type dopant, are examined from both a process end a device perspective. The context of this comparison is in applications that require a heavily doped layer beneath a thin deposit of epitaxial silicon. Results of a specific buried layer process characterization are included.

Library of Congress Subject Headings

Ion implantation; Semiconductor doping

Publication Date

5-12-1987

Document Type

Thesis

Student Type

Graduate

Degree Name

Electrical Engineering (MS)

Department, Program, or Center

Electrical Engineering (KGCOE)

Advisor

Lynn Fuller

Campus

RIT – Main Campus

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