Mary Kay Swan

Abstract

A method of determining photoresist image modulation was investigated and utilized, in determining the effect of varied resist thicknesses on modulation for both a high and low contrast system. Modulation is defined in terms of maximum and minimum energy required to clear a line/space pattern in the resist image. In This study, useing the resist as the threshold detector, chemical contrast is compared to physical contrast in terms of modulation. Shipley's MF314 and MF312 are the two different contrast development systems used. This study has shown that beyond 11700 Å of resist thickness, physical modulation is reduced to a measure of difference between Emax and Emin, and tells very little about the true modulation. This is in part due to a loss of developer interaction with modulation at resists thicker than 11000 Å. This holds for both MF312 and MF314.

Library of Congress Subject Headings

Photoresists

Publication Date

5-21-1985

Document Type

Thesis

Student Type

Undergraduate

Degree Name

Imaging Science (BS)

Department, Program, or Center

School of Photographic Arts and Sciences (CIAS)

Advisor

John Petersen

Comments

Physical copy available from RIT's Wallace Library at TK7874.S87 1985

Campus

RIT – Main Campus

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