Abstract

The influence of oxide etch backs done in LOCOS based isolation technologies on the low level leakage and reliability of tunnel oxide capacitors has been studied. Tunnel oxide structures are part of nonvolatile memory devices such as Flash EEPROMs and are critical to their overall performance. Locos isolated, area and edge intensive capacitors with 94 A tunnel oxide have been manufactured and tested. Test results indicate that the extent of the etch back and the use of HF instead of buffered HF as chemical etchants do not adversely affect the low level leakge of the tunnel capacitors. However, oxide endurance analysis based on constant current charge to breakdown tests show a significant degradaton if an aggressive etch back is adopted.

Library of Congress Subject Headings

Semiconductor storage devices--Reliability--Research; Semiconductor storage devices--Design and construction; Metal oxide semiconductors--Reliability--Research; Metal oxide semiconductors--Design and construction; Capacitors--Design and construction; Capa

Publication Date

5-1-1995

Document Type

Thesis

Department, Program, or Center

Electrical Engineering (KGCOE)

Advisor

Turkman, R.

Advisor/Committee Member

Jackson, M.

Advisor/Committee Member

Ramanan, S.

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7895.M4 B72 1995

Campus

RIT – Main Campus

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