Abstract

In most RF receivers, the Low Noise Amplifier (LNA) is normally the first component, whose performance is very critical. For the LNA architecture that uses source degeneration inductors and cascode topology, the performance depends largely on the performance of the inductors. All the parasitics associated with the inductors should be thoroughly analyzed and taken into consideration while designing the LNA. The work presented in this thesis can be broadly classified as follows: optimization of the LNA design with respect to all the parasitics associated with the on-chip spiral inductors, modeling high performance inductors, which are embedded in the silicon substrate and analysis of parasitic effects from the Electro Static Discharge (ESD) protection circuitry on the performance of the LNA. A methodology has been developed such that the LNA design can be optimized in the presence of an ESD protection circuitry in order to achieve the required input impedance match. This optimization procedure is presented for all possible placements of the ESD protection circuitry at the input of the LNA, that is, with respect to the gate inductor being realized on-chip or off-chip or a combination of on-chip and off-chip inductors. The thesis presents the procedure to vary the source inductance and gate inductance values in the presence of parasitic ESD capacitance in order to optimize LNA design such that the required input impedance match is maintained.

Library of Congress Subject Headings

Amplifiers, Radio frequency--Design and construction; Amplifiers (Electronics)--Design and construction; Electric inductors; Electric noise

Publication Date

8-1-2002

Document Type

Thesis

Department, Program, or Center

Electrical Engineering (KGCOE)

Advisor

Grande, William

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.58.N3 S653 2002

Campus

RIT – Main Campus

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