Abstract
During initial analysis of Silicon Carbide (SiC) based field effect devices, testing apparatus and methodologies were developed and implemented to characterize the effects of neutron radiation and high temperatures on the devices. This paper will discuss the development of these methodologies and the apparatus fabricated to conduct the testing. Also discussed will be the state of the art of SiC at the time of the testing and a summary of the relevant radiation effects physics and device physics used in the development of the testing apparatus and methodologies. A summary of the effectiveness of the test apparatus and methodologies and a discussion of the results reported [1,2] will be presented; the results will show a successful test methodology that offers the transferability of the application of the apparatus and methodologies in future studies.
Library of Congress Subject Headings
Field-effect transistors--Electric properties--Testing; Field-effect transistors--Effect of temperature on; Field-effect transistors--Effect of radiation on
Publication Date
12-1-1995
Document Type
Thesis
Department, Program, or Center
Electrical Engineering (KGCOE)
Advisor
Fuller, Lynn
Recommended Citation
Oakley, Robert, "The Electrical characterization of SiC JFETs in high temperature and neutron radiation environments" (1995). Thesis. Rochester Institute of Technology. Accessed from
https://repository.rit.edu/theses/5576
Campus
RIT – Main Campus
Comments
Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.95 .O244 1995