Goodwin Ting

Abstract

The development of an integrated driver circuit intended for medium power switching applications is presented. The device contains, on one chip, CMOS digital control logic and bipolar drivers, with BiCMOS interface between the two technologies. The custom integrated circuit includes four outputs each capable of switching over 500 mA at 30 volts, at a frequency of up to 1 MHz. The development effort includes the design of the chip with its component circuits and cells. Standard cell CMOS logic gates along with drive and interface circuits were designed and characterized. An appropriate BiCMOS process was developed which utilizes an n-well based 4-micron polysilicon gate MOS technology and vertical NPNs with subcollector and double emitter implants. The chip performance specifications are evaluated with respect to technology requirements and device characteristics, and trade-offs in the design of the chip and the process are examined. Process and device modeling results are compared with the measured data, which show that the objectives of the design are successfully met for the various applications involving resistive, capacitive, and inductive loads.

Library of Congress Subject Headings

Metal oxide semiconductors, Complementary; Bipolar integrated circuits

Publication Date

8-1-1991

Document Type

Thesis

Department, Program, or Center

Electrical Engineering (KGCOE)

Advisor

Fuller, Lynn

Advisor/Committee Member

Zentum, Reyan

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.99.M44 T56 1991

Campus

RIT – Main Campus

Download

Share

COinS