Abstract

A bipolar fabrication service has been developed at the Rochester Institute of Technology to service students and faculty from the Microelectronic, Electrical and Computer Engineering departments wanting to realize designed integrated circuits. The fabrication technique combined Implanted N-Well and double diffusion processes. Phosphorous was implanted into a p-type substrate, oxidized for eight hours and diffused in nitrogen for another 40 hours to create isolated n-wells. Devices were then fabricated using a double diffusion process. The CAD tool used for the service is the Integrated Circuit Editor, ICE, which has campus wide accessibility through the RIT VAX system. Designed standard cells include resistors, bipolar and MOS transistors, a current mirror, a differential amplifier, a Darlington circuit and an operational amplifier. Full custom circuits can also be designed using ICE. Maskmaking files generated from circuit designs are sent to the Microelectronic Engineering department for circuit fabrication, and the completed circuits are returned to the designer for testing. The RIT N-Well process has provided vertical NPN and PNP transistors with common emitter current gains of 100 and 40 respectively, Early voltages greater than 50 volts, and breakdown voltages higher than 15 volts. Differential amplifiers and current mirrors have alos been successfully designed, fabricated and tested.

Library of Congress Subject Headings

Metal oxide semiconductors, Complementary--Design and construction; Bipolar integrated circuits--Design and construction

Publication Date

3-1-1991

Document Type

Thesis

Department, Program, or Center

Electrical Engineering (KGCOE)

Advisor

Fuller, Lynn

Advisor/Committee Member

Pearson, Robert

Comments

Note: imported from RIT’s Digital Media Library running on DSpace to RIT Scholar Works. Physical copy available through RIT's The Wallace Library at: TK7871.99.M44 L37 1991

Campus

RIT – Main Campus

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