An experiment was run to determine the ability of surfactants to reduce or remove scum produced during development of a positive resist. Anionic, cationic and nonionic surfactants were added to a low metal ion developer at concentrations between 0.025% and 0.57o. The film thickness loss due to development was measured, and image profiles were observed with scanning electron micrographs . Of the surfactants tried, Aerasol OT-75 (dioctyl ester of sodium sulfosuccinic acid) produced the best results, 9.57o film thickness loss with little image profile change. However, the experiment was limited by processing condition variables.
Library of Congress Subject Headings
Microelectronics; Semiconductors; Photoresists
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Department, Program, or Center
School of Photographic Arts and Sciences (CIAS)
Belden, Michael P., "The ability of surfactants to assist in the removal of image scum in positive resist development" (1982). Thesis. Rochester Institute of Technology. Accessed from
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